Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization
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Preparation of epitaxial PbTiO 3 thin films by metalorganic vapor phase epitaxy under reduced pressure
In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...
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تاریخ انتشار 2017